A simplified predictive model for high-fluence ultra-short pulsed laser ablation of semiconductors and dielectrics

Ultra-short pulsed laser ablation is a very complicated process and a predictive model is very desirable for process design and optimization in practical applications. However, the molecular dynamics or hydrodynamic models, although they are powerful and necessary tools for the study of the fundamental physics, are time-consuming and difficult to apply for practical applications. In this paper, a predictive, simplified and easy to apply model has been developed for high-fluence ultra-short laser ablation of semiconductors and dielectrics. Unlike many other simplified models, this model does not involve any free adjustable variables. The model predictions agree well with experimental measurements for femtosecond laser ablation, while the model is not very applicable for pulse durations more than ∼10 ps.