Title of article
Modification by H-termination in growth process of titanium silicide on Si(0 0 1)-2 × 1 observed with scanning tunneling microscopy
Author/Authors
T. Aoki، نويسنده , , K. Shudo، نويسنده , , K. SATO، نويسنده , , T. Uchikoshi and S. Ohno، نويسنده , , H. Nishioka، نويسنده , , T. Iida، نويسنده , , M. Toramaru، نويسنده , , M. Tanaka، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
5
From page
1191
To page
1195
Abstract
Formation processes of titanium silicide on hydrogen-terminated H/Si(0 0 1)-2 × 1 surface are studied at the atomic scale with a scanning tunneling microscopy (STM). Square-shaped nanoislands were observed on the Ti/H/Si(0 0 1) surface after annealed at 873–1073 K. These are the epitaxial nanoislands moderately grown due to the local orientation relationship between C49–TiSi2 and Si(0 0 1), because passivation by surface hydrogen on Si(0 0 1) suppresses active and complex bond formation of Ti–Si.
Keywords
Ti , Hydrogen , Silicide , Surface , STM
Journal title
Applied Surface Science
Serial Year
2009
Journal title
Applied Surface Science
Record number
1011600
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