Author/Authors :
Siyoung Kim Seung-Ki Sul Lipo، نويسنده , , Woong Lee، نويسنده , , Mina Jung، نويسنده , , Jiho Chang، نويسنده , , Aung Khaing Nyi، نويسنده , , Hongchan Lee، نويسنده , , Joonsuk Song، نويسنده , , Dongcheol Oh، نويسنده , , Seunghwan Park، نويسنده , , Takafumi Yao، نويسنده ,
Abstract :
We have investigated on the molecular beam epitaxy (MBE) of Te-doped GaSb films on ZnTe buffer. Te-doped GaSb (GaSb:Te) films with and without ZnTe buffer were grown on (0 0 1) GaAs substrates. GaSb:Te/ZnTe/GaAs film revealed higher mobility (=631 cm2/V s) in comparison to GaSb:Te/GaAs film (=249 cm2/V s). To explain the higher mobility of GaSb:Te on ZnTe buffer, dislocation density and temperature dependence of Hall measurement results were analyzed. Temperature dependence of Hall measurement shows strong influence of the dislocation scattering, which indicates that dislocation reduction by the ZnTe buffer enhances the carrier mobility of GaSb films.
Keywords :
Molecular beam epitaxy , GaSb , Doping , Hall measurement
