Title of article
Characterization of Si-added aluminum oxide (AlSiO) films for power devices
Author/Authors
Naoyoshi Komatsu، نويسنده , , Keiko Masumoto، نويسنده , , Hidemitsu Aoki، نويسنده , , Chiharu Kimura، نويسنده , , Takashi Sugino، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
1803
To page
1806
Abstract
Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C–V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C–V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.
Keywords
MIS , AlO , Power device , Wide bandgap , Insulator , AlSiO
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1011715
Link To Document