Title of article :
Emission properties of Ti-DLC films prepared by unbalanced magnetron sputtering
Author/Authors :
X.M. Gu and H.F. Liang، نويسنده , , Z.H. Liang، نويسنده , , C.L. Liu، نويسنده , , L.G. Meng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm2 could be obtained at an applied field of 33 V/μm and the threshold field was 24 V/μm for the coplanar emission structure. The silicon substrate was found to limit the emission current in the diode structure because of its high resistivity.
Keywords :
Field emission , Ti-DLC films , Device structures
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
