Ag–N doped ZnO film and its p–n junction fabricated by ion beam assisted deposition

Ag–N doped ZnO film was synthesized by ion beam assisted deposition and its electrical properties and annealing property were investigated. The films remained p-type even after annealing at 400 °C in air for 10 min. While the annealing temperature went up to 500 °C, the conduction type of these films shifted from p-type to n-type. The p-type ZnO film revealed low resistivity (0.0016 Ω cm), low Hall mobility (0.65 cm2 V−1 s−1) and high carrier concentration (5.8 × 1020 cm−3). ZnO p–n homojunction consisting of a p-type layer (Ag–N doped ZnO film) and an n-type layer (In-doped ZnO film) had been fabricated by ion beam assisted deposition. With electrical measurement, its current–voltage curve had a typical rectifying characteristic with current rectification ratio of 25 at bias ±5 V and a reverse current of 0.01 mA at −5 V. The depletion width was estimated 3.8 nm by using p–n junction equation.