Title of article
Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer
Author/Authors
T. El Asri، نويسنده , , M. Raissi، نويسنده , , S. Vizzini، نويسنده , , A. El Maachi، نويسنده , , E.L. Ameziane، نويسنده , , F. Arnaud d’Avitaya، نويسنده , , J.-L. Lazzari، نويسنده , , C. Coudreau، نويسنده , , H. Oughaddou، نويسنده , , B. Aufray، نويسنده , , A. Kaddouri، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
2731
To page
2734
Abstract
Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy were used to study the cobalt and silicon diffusion through the interfaces of Co/AlO/Si(0 0 1) hetero-structure. The results are discussed as a function of the annealing temperature of sample and show that the diffusion process at the interfaces starts for annealing temperatures above 200 °C without detectable modification of the oxide layer.
Keywords
Aluminum oxide layer , MIS structure , SIPS , AES , Cobalt , Silicon , Diffusion , HR-TEM
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1011873
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