Title of article
A novel sputtering oxidation coupling (SOC) method to fabricate VO2 thin film
Author/Authors
Xiaofeng Xu، نويسنده , , Anyuan Yin، نويسنده , , Xiliang Du، نويسنده , , Jiqing Wang، نويسنده , , Jiading Liu، نويسنده , , Xinfeng He، نويسنده , , Xingxing Liu، نويسنده , , Yilong Huan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
2750
To page
2753
Abstract
VO2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.
Keywords
VO2 thin films , Metal-insulator transition , Sputtering oxidation coupling
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1011876
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