Author/Authors :
Xiaofeng Xu، نويسنده , , Anyuan Yin، نويسنده , , Xiliang Du، نويسنده , , Jiqing Wang، نويسنده , , Jiading Liu، نويسنده , , Xinfeng He، نويسنده , , Xingxing Liu، نويسنده , , Yilong Huan، نويسنده ,
Abstract :
VO2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.
