Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current–voltage (I–V) and capacitance–voltage (C–V) techniques by the way of Al/GaAs Shottky junctions. The electric analysis allowed us to determine the n factor and the barrier height Фb0 parameters of Al/GaAs Schottky junctions. The (C–V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.