Title of article
A study of indium incorporation in In-rich InGaN grown by MOVPE
Author/Authors
Y. Guo، نويسنده , , X.L. Liu، نويسنده , , H.P. Song، نويسنده , , A.L. Yang، نويسنده , , X.Q. Xu، نويسنده , , G.L. Zheng، نويسنده , , Stephen H.Y. Wei، نويسنده , , S.Y. Yang، نويسنده , , Q.S. Zhu، نويسنده , , Z.G. WANG، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
5
From page
3352
To page
3356
Abstract
InGaN/GaN heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%.
Keywords
In-rich InGaN , Indium incorporation , MOVPE
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1011977
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