Title of article
Study of defects in proton irradiated GaAs/AlGaAs solar cells
Author/Authors
Fenfen Zhan، نويسنده , , Jianmin Hu، نويسنده , , Yifan Zhang، نويسنده , , Fang Lu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
6
From page
8257
To page
8262
Abstract
The properties of GaAs/AlGaAs solar cells irradiated with 40, 70, 100 and 170 keV protons have been studied. Current–voltage (IV) measurement showed that the worst degradation was found in the cells irradiated by 100 keV protons. The degradation was found defect dependent. Defect profile was obtained by the stopping and range of ions in matter (SRIM) simulation and deep-level transient spectroscopy (DLTS) measurement. In order to obtain the deep-level defect profile in depletion layer by DLTS measurement, the traditional calculation formula of defect concentration has been modified. DLTS measurement showed good agreement with that of the SRIM simulation.
Keywords
Defect profile , Proton irradiation , DLTS , IV , Solar cells
Journal title
Applied Surface Science
Serial Year
2009
Journal title
Applied Surface Science
Record number
1012076
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