Author/Authors :
D. Hern?ndez-Maldonado، نويسنده , , M. Herrera، نويسنده , , D.L. Sales، نويسنده , , P. Alonso-Gonz?lez، نويسنده , , Y. Gonz?lez، نويسنده , , L. Gonz?lez، نويسنده , , J. Pizarro، نويسنده , , P.L. Galindo، نويسنده , , S.I. Molina، نويسنده ,
Abstract :
The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.
Keywords :
Transmission electron microscopy , Droplet Epitaxy , Semiconductors , Quantum dots molecules
