Author/Authors :
J.F. Rodrigo، نويسنده , , D.L. Sales، نويسنده , , K. V. P. M. Shafi and A. Gedanken، نويسنده , , M. Henini، نويسنده , , L. Turyanska، نويسنده , , Vladimir S. Novikov، نويسنده , , S.I. Molina، نويسنده ,
Abstract :
The influence of post-growth annealing on the microstructure and photoluminescence (PL) of GaAsBi alloys grown on (3 1 1)B GaAs is analyzed. Conventional transmission electron microscopy (TEM) performed on as-grown samples evidence the presence of structural defects and a mosaic structure in the GaAsBi layer. A sequence of stacking faults at regions close to the GaAs/GaAsBi interface are observed in high resolution TEM images. After annealing at 473 K during 3 h the mosaic structure disappears, the presence of defects is reduced and the PL peak intensely enhances.
Keywords :
GaAsBi , Semiconductor compounds , Photoluminescence , Molecular beam epitaxy , Transmission electron microscopy
