Author/Authors :
C.F. Cai، نويسنده , , H.Z. Wu، نويسنده , , J.X. Si، نويسنده , , W.H. Zhang، نويسنده , , Y. Xu، نويسنده , , J.F. Zhu، نويسنده ,
Abstract :
The band offset at the interface of PbTe/Ge (1 0 0) heterojunction was studied by the synchrotron radiation photoelectron spectroscopy. A valence band offset of ΔEV = 0.07 ± 0.05 eV, and a conduction band offset of ΔEC = 0.27 ± 0.05 eV are concluded. The experimental determination of the band offset for the PbTe/Ge interface should be beneficial for the heterojunction to be applied in new optoelectronic and electronic devices.
