Author/Authors :
Chunye Li، نويسنده , , Hongwei Liang، نويسنده , , Jianze Zhao، نويسنده , , Qiuju Feng، نويسنده , , Jiming Bian، نويسنده , , Yang liu، نويسنده , , Rensheng Shen، نويسنده , , Wangcheng Li، نويسنده , , Guoguang Wu، نويسنده , , G.T. Du، نويسنده ,
Abstract :
ZnO thin films were treated by high-pressure hydrogen (H2). Scanning electron microscope (SEM) images show that the surface morphology of ZnO films has been changed significantly by H2 treatment. X-ray diffraction patterns show that the Zn(OH)2 phases formed after H2 treatment. The X-ray photoelectron spectroscopy results indicate that H atoms were doped into the surface of ZnO by forming H–O–Zn bond. The phenomenon shows that it is easy to form O–H bond in ZnO rather than H interstitial atom under high-pressure hydrogen circumstance.
Keywords :
ZnO , MOCVD , Zn(OH)2 , High-pressure H2
