Author/Authors :
Qing Yang، نويسنده , , Yu Saeki، نويسنده , , Sotaro Izumi، نويسنده , , Takao Nukui، نويسنده , , Atsushi Tackeuchi، نويسنده , , Akihiro Ishida، نويسنده , , Hirokazu Tatsuoka، نويسنده ,
Abstract :
ZnO/ZnGa2O4 composite layers were synthesized by simple thermal oxidation of ZnS substrates with gallium in the air. The continuous-wave and time-resolved photoluminescence measurements for the composites were performed at room temperature. It is found that the visible deep level emission from ZnO in ZnO/ZnGa2O4 composite layer was almost suppressed. In addition, the UV emission with long lifetime was also observed in comparison with that of pure ZnO layer without ZnGa2O4.
Keywords :
relaxation , Ultraviolet photoluminescence , Gallium , ZnO/ZnGa2O4 , Thermal oxidation
