Title of article :
Wetting and evaporation behaviors of molten Mg on partially oxidized SiC substrates
Author/Authors :
Dan Zhang، نويسنده , , Ping Shen، نويسنده , , Laixin Shi، نويسنده , , Qiaoli Lin، نويسنده , , Qichuan Jiang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
5
From page :
7043
To page :
7047
Abstract :
The wetting and evaporation behaviors of molten Mg drops on pressureless-sintered SiC surfaces were studied in a flowing Ar atmosphere at 973–1173 K by an improved sessile drop method. The initial contact angles are between 83° and 76°, only mildly depending on temperature. The formation of a ridge at the triple junction as a result of reaction between molten Mg and the SiO2 film on the SiC surface pins the triple line and leads to a constant contact diameter mode during the entire evaporation process. Moreover, the diffusion coefficients of the Mg vapor at different temperatures were evaluated based on a simple model.
Keywords :
Evaporation , Wetting , Mg , Diffusion
Journal title :
Applied Surface Science
Serial Year :
2010
Journal title :
Applied Surface Science
Record number :
1013152
Link To Document :
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