• Title of article

    Hydrogen peroxide treatment on ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts

  • Author/Authors

    Chia-Hung Tsai، نويسنده , , Chen-I Hung، نويسنده , , Cheng-Fu Yang، نويسنده , , Mau-Phon Houng، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    6
  • From page
    610
  • To page
    615
  • Abstract
    We utilize hydrogen peroxide (H2O2) treatment on (0 0 0 1) ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts (SCs). X-ray rocking curves show the mosaicity structure becomes larger after H2O2 treatment. Photoluminescence (PL) spectra show the yellow-orange emission peaking at ∼576–580 nm with respect to deep level of oxygen interstitials introduced by H2O2 treatment. The threshold formation of ZnO2 resistive layer on H2O2-treated ZnO for 45 min is observed from grazing-incidence X-ray diffraction. The better electrical characteristic is performed by Pt oxide SC with the larger barrier height (1.09 eV) and the lower leakage current (9.52 × 10−11 A/cm2 at −2 V) than Pt SC on the H2O2-treated ZnO for 60 min. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS) examinations indicate the promoted interface oxide bonding and Zn outdiffusion for Pt oxide contact, different from Pt contact. Based on current–voltage, capacitance–voltage, X-ray diffraction, PL spectra, XPS, and SIMS results, the possible mechanism for effective rectifying characteristic and enhanced Schottky behavior is given.
  • Keywords
    Pt (oxide) , Schottky barrier height , ZnO , Schottky contact , Hydrogen peroxide
  • Journal title
    Applied Surface Science
  • Serial Year
    2010
  • Journal title
    Applied Surface Science
  • Record number

    1013360