Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions

A series of exchange-biased magnetic tunneling junctions (MTJs) were made in an in-plane deposition field (h) = 500 Oe. The deposition sequence was Si(1 0 0)/Ta(30 Å)/CoFeB(75 Å)/AlOx(d Å)/Co(75 Å)/IrMn(90 Å)/Ta(100 Å), where d was varied from 12 Å to 30 Å. The MTJ was formed by the cross-strip method with a junction area of 0.0225 mm2. The tunneling magnetoresistance (ΔR/R) of each MTJ was measured. The high-resolution cross-sectional transmission electron microscopic (HR X-TEM) image shows the very smooth interface and clear microstructure. X-ray diffraction (XRD) demonstrates that the IrMn layer of the MTJ exhibits a (1 1 1) texture. From the results (ΔR/R) increases from 17% to 50%, as d increases from 12 Å to 30 Å. The tunneling resistance (Ro) of these junctions ranges from 150 Ω to 250 Ω. The exchange-biasing field (Hex) of the MTJ is 50–95 Oe. Finally, the saturation resistance (Rs) was measured as a function of the angle (α) of rotation, where α is the angle between h and the in-plane saturation field (Hs) = 1.1 kOe. The following figure presents the dependence of Rs on α, instead of originally expected independence, the curve actually varies with a period of π.