Preparation of silicon oxycarbide films by laser ablation of SiO/3C–SiC multicomponent targets

Amorphous silicon oxycarbide (SiOC) films were prepared on Si (1 0 0) substrates by laser ablation at 773 K using mixed targets with different ratios of SiO to 3C–SiC. The structure and composition of the as-deposited films as a function of target content were investigated. With increasing the SiO content in the targets, the contents of Si–C and Si–O–C bonds decreased while that of Si–O bond increased. The mixing ratio of the targets had a dominant effect on the film composition and the stoichiometry of silicon oxycarbide films could be controlled by varying the mixing ratio of the targets.