Title of article
Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique
Author/Authors
Afzaal Qamar، نويسنده , , Arshad Mahmood، نويسنده , , Tuba Sarwar، نويسنده , , Nadeem Ahmed، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
6923
To page
6927
Abstract
Hexagonal SiC thin films have been deposited using radio frequency reactive magnetron sputtering technique by varying the substrate temperature and other deposition conditions. Prior to deposition surface modification of the substrate Si(1 0 0) played an important role in deposition of the hexagonal SiC structure. The effect of substrate temperature during deposition on structure, composition and surface morphology of the SiC films has been analyzed using atomic force microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. X-ray diffraction in conventional θ–2θ mode and omega scan mode revealed that the deposited films were crystalline having 8H-SiC structure and crystallinity improved with increase of deposition temperature. The bonding order and Si–C composition within the films showed improvement with the increase of deposition temperature. The surface of thin films grew in the shape of globes and columns depending upon deposition temperature. The optical properties also showed improvement with increase of deposition temperature and the results obtained by ellipsometry reinforced the results of other techniques.
Keywords
8H-SiC , Thin films , Sputtering
Journal title
Applied Surface Science
Serial Year
2011
Journal title
Applied Surface Science
Record number
1014428
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