Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based s

A pyramid and nanowire binary structure of monocrystalline silicon wafer was fabricated by chemical etching. Much lower reflectance of silicon wafer with this structure was obtained compared with that of single pyramid or nanowaire arrays. The morphology, reflectivity and etching thickness of this structure were studied, as well as the influence on them caused by etching time and thickness of silver film. An average reflectance of 0.9% was obtained under optimized condition. The formation mechanism of silicon nanowires was explained by experimental evidence.