Title of article
Sn–CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study
Author/Authors
Karel Ma?ek، نويسنده , , Michal V?clav?، نويسنده , , Petr B?bor، نويسنده , , Vladim?r Matol?n، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
5
From page
6656
To page
6660
Abstract
Sn addition in the CeO2 thin film by simultaneous Sn metal and cerium oxide magnetron sputtering causes growth of Ce3+ rich films whilst pure cerium oxide sputtering provides stoichiometric CeO2 layers. Ce4+ → Ce3+ conversion is explained by a charge transfer from Sn atoms to unoccupied orbital Ce 4f0 of cerium oxide by forming Ce 4f1 state. XPS and SIMS revealed a formation of a new chemical Ce(Sn)+ state, which belongs to SnCeO2 species.
Keywords
XPS , Cerium oxide , SIMS , Tin–cerium mixed oxide , Magnetron sputtering
Journal title
Applied Surface Science
Serial Year
2009
Journal title
Applied Surface Science
Record number
1014563
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