Title of article
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
Author/Authors
K. Shi، نويسنده , , X.L. Liu، نويسنده , , D.B. Li، نويسنده , , J. Wang، نويسنده , , H.P. Song، نويسنده , , X.Q. Xu، نويسنده , , Stephen H.Y. Wei، نويسنده , , C.M. Jiao، نويسنده , , S.Y. Yang، نويسنده , , H. Song، نويسنده , , Q.S. Zhu، نويسنده , , Z.G. WANG، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
3
From page
8110
To page
8112
Abstract
XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 ± 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 ± 0.15 eV was obtained.
Keywords
Valence band offset , XPS , GaN/diamond heterojunction , Conduction band offset
Journal title
Applied Surface Science
Serial Year
2011
Journal title
Applied Surface Science
Record number
1014684
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