Author/Authors :
Xiaofeng Xu، نويسنده , , Xinfeng He، نويسنده , , Gang Wang، نويسنده , , Xiaolong Yuan، نويسنده , , Xingxing Liu، نويسنده , , Haiyan Huang، نويسنده , , Sheng Yao، نويسنده , , Huaizhong Xing، نويسنده , , Xiaoshuang Chen، نويسنده , , Junhao Chu، نويسنده ,
Abstract :
The high quality Vanadium dioxide (VO2) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO2 thin film samples exhibit a good metal–insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K–783 K, in good agreement with the Wagnerʹs high-temperature oxidation model.
Keywords :
Sputtering oxidation coupling , Vanadium dioxide , Temperature , Optimal oxidation time
