Title of article
Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography
Author/Authors
Jong Yeog Son، نويسنده , , Yun-Sok Shin، نويسنده , , Young-Han Shin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
3
From page
9885
To page
9887
Abstract
We demonstrate the nanoscale resistive random access memory (RRAM) element consisting of an approximately 30 nm diameter NiO nanodot and two bridging Au nanowires, formed by a dip-pen nanolithography technique using nickel carbonate (Ni2(CO3)(OH)2) and [AuCl4]− complex solutions, respectively. The Au/NiO/Au nanowire resistive switch exhibits typical unipolar switching characteristics with high performance at low Set and Reset voltages.
Keywords
NiO resistive switch , Dip-pen nanolithography , NiO nanowire , NiO RRAM
Journal title
Applied Surface Science
Serial Year
2011
Journal title
Applied Surface Science
Record number
1014972
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