Author/Authors :
Cheng Peng، نويسنده , , Liangcai Wu، نويسنده , , Zhitang Song)، نويسنده , , Feng Rao a، نويسنده , , Min Zhu، نويسنده , , Xuelai Li، نويسنده , , Bo Liu، نويسنده , , Limin Cheng، نويسنده , , Songlin Feng، نويسنده , , PINGXIONG YANG?، نويسنده , , Junhao Chu، نويسنده ,
Abstract :
Al doped Sb2Te3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb2Te3 films increase markedly with the increasing of Al concentration. The additional Al–Sb and Al–Te bonds enhance the amorphous thermal stability of the material. Al0.69Sb2Te3 material has a better data retention (10 years at 110 °C) than that of Ge2Sb2Te5 material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al0.69Sb2Te3 based device.
Keywords :
Phase transformation , Thin films , Sb2Te3 , XPS , Thermal properties
