Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H–SiC

In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H–SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950 °C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at Eα = 3.2 MeV, nuclear reaction analysis (NRA) at Ed = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.