Application of factor analysis in electron spectroscopic depth profiling on copper oxide

Depth profiles were taken by x-ray photoelectron spectrometry/Ar-ion sputtering from copper sheets oxidized during 30 min in air at 200 or 300°C, respectively. The data of the depth profiles were subjected to factor analysis in order to determine the relevant components of the copper oxide layers. Factor analysis shows the existence of a cuprous oxide layer (Cu2O) on both specimens under bombardment with 2 keV argon ions during depth profiling. Rutherford backscattering measurements and carrier gas fusion analysis were successfully applied to determine the oxygen content of the oxide layers. Results corroborate the identification of Cu2O in both layers.