Title of article :
Ion beam sensitized SiO2 surface for halide ions
Author/Authors :
M.T Pham، نويسنده , , W. Matz، نويسنده , , K. D. Moller، نويسنده , , J. Hüller، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
3
From page :
289
To page :
291
Abstract :
Halide ion sensitivity was obtained on a 100 nm thin SiO2 film implanted with Ag and Cl. An X-ray diffraction study showed the formation of metallic silver spheres with an average size of 20 nm embedded within the SiO2 matrix which are probably sheathed by a thin AgCl skin.
Keywords :
Surface techniques , Silicon dioxide surface , Halide ions
Journal title :
Analytica Chimica Acta
Serial Year :
1996
Journal title :
Analytica Chimica Acta
Record number :
1023940
Link To Document :
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