Title of article :
Design of 0.4 V Operational Amplifier Using Low-Power Techniques
Author/Authors :
Izadpanah Tous، Saber نويسنده Department of Electrical Engineering, Sadjad Institute of higher Education, Mashhad , , Behroozi، Mahmoud نويسنده Department of Electrical Engineering, Sadjad Institute of higher Education, Mashhad , , Asadpoor، Vahid نويسنده Department of Electrical Engineering, Sadjad Institute of higher Education, Mashhad ,
Issue Information :
فصلنامه با شماره پیاپی 5 سال 2013
Abstract :
In this paper a low-power/low-voltage CMOS operational amplifier (op amp) using sub-threshold region of MOSFET for bio-medical instrumentation operating with a 0.4 V supply is described. A two stage operational amplifier is designed and simulated using 0.18 ?m CMOS technology. Two types of low-power/low-voltage design techniques (a) bulk-driven (b) dynamic threshold voltage MOSFET (DTMOS) are used. With bulk-driven technique, the open loop gain is 69.88 dB, the unity gain-bandwidth (UGBW) is 87.1 kHz, the CMRR obtained is 83 dB and phase margin is 88.78 degree with 10pF load. The power consumption is 1.8 ?W. With DTMOS technique, the open loop gain is 83.31 dB, the unity gain-bandwidth is 758.6 kHz, the CMRR obtained is 157.1 dB and the phase margin is 71.5 degree with 10pF load. The power consumption is 1.8 ?W. The DTMOS technique provides high unity gain-bandwidth and high open loop gain as compared to bulk-driven technique.
Journal title :
Majlesi Journal of Telecommunication Devices
Journal title :
Majlesi Journal of Telecommunication Devices