Title of article
Improved thermal stability of ferromagnetic tunnel junctions with a CoFe/CoFeO/sub x//CoFe pinned layer
Author/Authors
Y.، Saito, نويسنده , , T.، Ochiai, نويسنده , , N.، Tezuka, نويسنده , , K.، Inomata, نويسنده , , S.، Sugimoto, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-2796
From page
2797
To page
0
Abstract
Annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for magnetic tunnel junctions with CoFeO/sub x/ inserted in the pinned layer was investigated. A junction with a CoFe/CoFeO/sub x//CoFe pinned layer exhibited TMR ratios of 46.5% and 42.5% after annealing at 350(degree)C and 375(degree)C, respectively. The reason for the improvement of the thermal stability is related to oxygen diffusion from the CoFeO/sub x/ layer, and there is a possibility that CoFeO/sub x/ plays the role of a Mn (in MnIr exchange layer) diffusion barrier.
Keywords
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Journal title
IEEE TRANSACTIONS ON MAGNETICS
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON MAGNETICS
Record number
104283
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