Author/Authors :
Yuan Xiaoli، نويسنده , , Shi Yi، نويسنده , , Gu Shulin، نويسنده , , Zhu Jianmin، نويسنده , , Zheng Youdou، نويسنده , , Saito Kenichi، نويسنده , , Ishikuro Hiroki، نويسنده , , Hiramoto Toshiro، نويسنده ,
Abstract :
Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance–voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.
