Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (0 0 1) InP substrate by MOCVD

In this paper, we present the effects of growth interruption on self-assembled InAs quantum dots (QDs), which were grown on a (0 0 1) InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD). Large red shifts in the photoluminescence (PL) emission from the InAs QDs together with narrowing of the full-width at half-maximum (from 107 to 70 meV) of the PL are observed as a result of the growth interruption. Besides adatom migration, As/P exchange reaction during the interruption is demonstrated to play an important role in changing the optical properties of InAs/InP QDs.