Title of article
Interband tunneling depopulation in type-II InAs/GaSb cascade laser heterostructure
Author/Authors
Mikhail V. Kisin، نويسنده , , Michael A. Stroscio، نويسنده , , Serge Luryi، نويسنده , , Gregory Belenky، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
11
From page
576
To page
586
Abstract
An exact analytical representation has been obtained for electron eigenstates in the full isotropic 8-band Kane model and applied to calculate the depopulation rate of the lower lasing state in the active region of a type-II intersubband cascade laser. We show that interband tunneling rate takes its maximum value when the depopulated states belong to the upper of the coupled electron- and hole-like subbands in the “leaky window” of the broken-gap InAs/GaSb heterostructure.
Keywords
Type-II semiconductor heterostructures , Interband tunneling , Cascade laser
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2001
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044735
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