Performance simulation of 3.3 μm interband laser diodes grown on InAs substrate

Three InAs-based quantum well laser diodes are theoretically investigated and compared with conventional InAsSb/InAs multiquantum well laser. The structures are composed by ten periods of type-II staggered InAsSb/InAs(P)/InAsSb active quantum wells with the “W” geometry, InAsPSb (or InAlAsSb) lattice-matched waveguide layers and InP0.69Sb0.31 (or AlAs0.16Sb0.84) cladding layers. They are designed to operate at View the MathML source at room temperature. Their performances are theoretically evaluated in terms of modal gain and threshold current density obtained from optical gain calculation. All the “W” laser diodes are able to operate at room temperature, but requirements for optical losses are very strict for these structures. The best laser structure, including ten InAsSb/InAsP/InAsSb/InAsPS quantum well periods and AlAsSb cladding layers, has a calculated threshold current density View the MathML source at room temperature, with a characteristic temperature View the MathML source. These values are obtained under the hypothesis of a total loss coefficient View the MathML source, and Auger coefficient as high as View the MathML source.