Title of article :
Microstructural and compositional characterization of a new silicon carbide nanocables using scanning transmission electron microscopy
Author/Authors :
D.P Yu، نويسنده , , Y.J Xing، نويسنده , , M. Tencé، نويسنده , , H.Y Pan، نويسنده , , Y Leprince-Wang، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
5
From page :
1
To page :
5
Abstract :
Composite nanocables with peculiar structure were synthesized using a solid–liquid–solid mechanism. Each of the nanocables consists of a crystalline core sheathed with an amorphous layer (View the MathML source in average diameter). The crystalline core of the nanocables is so fine (1–View the MathML source in diameter), that it is nearly impossible to characterize them using other methods. Fortunately, the powerful high resolution electron energy loss spectroscopy (EELS) technique (with minimum beam size View the MathML source) allowed us to analyze this peculiar nanomaterial. The fine crystalline core was proved to be a hexagonal silicon carbide, while the sheathing layer was silicon oxide. High angle dark field technique was employed to map the nanocable structures. Our results show that the EELS is powerful in nanometric regime characterization, while the SiC nanocables reported here may be useful in future nanotechnology.
Keywords :
TEM , EELS , Nanocables , Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1044785
Link To Document :
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