Mobility of spin-polarized holes in GaMnAs multilayers

The spin-dependent lateral mobility of the hole gas in a AlAs/GaAs quantum well inserted by two Ga1−xMnxAs metallic ferromagnetic layers is studied. A self-consistent approach is used to calculate the electronic structure taking into account the direct Coulomb Hartree and exchange-correlation terms, as well as the sp–d exchange interaction with the Mn magnetic moments. Our results show that the mobility of the anti-parallelly polarized holes can be greatly distinguished from that of the parallelly polarized.