Title of article
Mobility of spin-polarized holes in GaMnAs multilayers
Author/Authors
X.F. Wang and G. Zhou ، نويسنده , , L. Loureiro da Silva، نويسنده , , M.A. Boselli، نويسنده , , I.C. da Cunha Lima، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
23
To page
26
Abstract
The spin-dependent lateral mobility of the hole gas in a AlAs/GaAs quantum well inserted by two Ga1−xMnxAs metallic ferromagnetic layers is studied. A self-consistent approach is used to calculate the electronic structure taking into account the direct Coulomb Hartree and exchange-correlation terms, as well as the sp–d exchange interaction with the Mn magnetic moments. Our results show that the mobility of the anti-parallelly polarized holes can be greatly distinguished from that of the parallelly polarized.
Keywords
Spin-polarization , Mobility , Diluted-magnetic semiconductor
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044788
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