Novel method for the preparation of silicon oxide layer on TiO2 particle and dynamic behavior of silicon oxide layer on TiO2 particle

Two methods for the preparation of TiO2 particles using the gas evaporation methods have been proposed. A method for selective growth of the anatase and/or rutile particles as well as a method of covering TiO2 particles with an SiO2 layer has been developed. The process of dissolving the SiO2 layer into TiO2 particles has been observed by an in situ observation using high-resolution electron microscopy. SiO2 layers of View the MathML source order were dissolved completely into TiO2 particles of the order of View the MathML source at 750°C. These SiO2 layers appeared again at room temperature on the surfaces of TiO2 particles. This phenomenon was observed only at a high temperature. By the use of the phenomenon of dissolving the SiO2 layer into TiO2 particles at high temperature, the growth of TiO2 particles covered with the SiO2 layer has been discussed.