Author/Authors :
P. Miska، نويسنده , , J. Even، نويسنده , , C. Paranthoen، نويسنده , , O. Dehaese، نويسنده , , H. Folliot، نويسنده , , S. Loualiche، نويسنده , , M. Senes، نويسنده , , X. Marie، نويسنده ,
Abstract :
We present new optical properties of InAs/InP quantum dots (QDs) emitting around View the MathML source for laser applications. An original growth method enables us to control the QD emission wavelength between 1.3 and View the MathML source at room temperature. Results on QDs emitting at View the MathML source are presented in this work. They have been studied by optical measurements with continuous wave and time-resolved photoluminescence experiments. Moreover, the results obtained by modelling the band structure seems to be consistent with the interpretations of experimental data.
Keywords :
Quantum dots , Semiconductor lasers , Optical properties , Modelling