Title of article :
for laser applications
Author/Authors :
P. Miska، نويسنده , , J. Even، نويسنده , , C. Paranthoen، نويسنده , , O. Dehaese، نويسنده , , H. Folliot، نويسنده , , S. Loualiche، نويسنده , , M. Senes، نويسنده , , X. Marie، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Pages :
4
From page :
56
To page :
59
Abstract :
We present new optical properties of InAs/InP quantum dots (QDs) emitting around View the MathML source for laser applications. An original growth method enables us to control the QD emission wavelength between 1.3 and View the MathML source at room temperature. Results on QDs emitting at View the MathML source are presented in this work. They have been studied by optical measurements with continuous wave and time-resolved photoluminescence experiments. Moreover, the results obtained by modelling the band structure seems to be consistent with the interpretations of experimental data.
Keywords :
Quantum dots , Semiconductor lasers , Optical properties , Modelling
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2003
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1044873
Link To Document :
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