Title of article
Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells
Author/Authors
A Morel، نويسنده , , P Lefebvre، نويسنده , , T Taliercio، نويسنده , , Bretagnon، P. نويسنده , , B Gil، نويسنده , , N Grandjean، نويسنده , , B Damilano، نويسنده , , J Massies، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
4
From page
64
To page
67
Abstract
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional “pseudo-donor–acceptor pairs”.
Keywords
InGaN/GaN quantum wells , Recombination dynamics , Donor–acceptor pairs
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044875
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