Author/Authors :
A.F.G Monte، نويسنده , , F.V. de Sales، نويسنده , , S.W. da Silva، نويسنده , , M.A.G. Soler، نويسنده , , J.M.R. Cruz، نويسنده , , P.C. Morais ، نويسنده , , M.J. da Silva، نويسنده , , A.A. Quivy، نويسنده , , J.R. Leite، نويسنده ,
Abstract :
The carrier dynamics in self-assembled InAs/GaAs quantum dots (QDs) has been investigated as a function of the lateral dot density. We investigated the influence of the QD density on the process of carrier transfer among the QDs. We have found evidence that potential barriers at the wetting layer and dot interfaces are responsible to decrease the carrier capture in low density QDs. This effect can be observed on the increased carrier transport.
Keywords :
Potential barriers , Quantum dots , Energy transfer , Carrier diffusion
