Author/Authors :
Y.D. Jang، نويسنده , , J.S. Yim، نويسنده , , U.H. Lee، نويسنده , , D. Lee، نويسنده , , J.W. Jang، نويسنده , , K.H. Park، نويسنده , , W.G. Jeong، نويسنده , , J.H. Lee، نويسنده , , D.K. Oh، نويسنده ,
Abstract :
A strong and narrow photoluminescence (PL) signal with a full-width at half-maximum of View the MathML source emitting at View the MathML source at room temperature has been obtained from InAsN quantum dots (QD) on GaAs. The PL yield of the View the MathML source peak at room temperature remains at 8% of the value at View the MathML source and the carrier lifetime at View the MathML source is measured to be View the MathML source. We believe these values indicate that the grown InAsN QDs are of high crystal quality.
