Title of article
InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3 μm
Author/Authors
Y.D. Jang، نويسنده , , J.S. Yim، نويسنده , , U.H. Lee، نويسنده , , D. Lee، نويسنده , , J.W. Jang، نويسنده , , K.H. Park، نويسنده , , W.G. Jeong، نويسنده , , J.H. Lee، نويسنده , , D.K. Oh، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
127
To page
128
Abstract
A strong and narrow photoluminescence (PL) signal with a full-width at half-maximum of View the MathML source emitting at View the MathML source at room temperature has been obtained from InAsN quantum dots (QD) on GaAs. The PL yield of the View the MathML source peak at room temperature remains at 8% of the value at View the MathML source and the carrier lifetime at View the MathML source is measured to be View the MathML source. We believe these values indicate that the grown InAsN QDs are of high crystal quality.
Keywords
Quantum dot , Laser diode , Nitrogen
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044916
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