Title of article
Kondo effect and tristability in a double-quantum dot
Author/Authors
Pedro A. Orellana، نويسنده , , Gustavo A. Lara، نويسنده , , Enrique V. Anda، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
152
To page
153
Abstract
Electron tunneling through a non-equilibrium double quantum dot in a series in the Kondo regime is studied. In the region of negative differential resistance, it is shown that this system possesses a complex response to the applied potential characterized by a tristable solution for the current. The different natures of the solutions are characterized and it is shown that the effects of an applied magnetic field could be used to control the region of tristability. The mean-field slave-boson formalism is used to obtain the solution of the problem.
Keywords
Two impurity Anderson model , Kondo effect , Double quantum dot
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044937
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