Title of article
Peculiarities of conductivity in structures delta-doped by Si on vicinal (1 1 1)A GaAs substrate
Author/Authors
Vladimir A. Kulbachinskii، نويسنده , , Galib B. Galiev، نويسنده , , Vladimir G. Mokerov، نويسنده , , Roman A. Lunin، نويسنده , , Vasili A. Rogozin، نويسنده , , Andrey V. Derkach، نويسنده , , Ivan S. Vasilʹevskii، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
172
To page
173
Abstract
Novel epitaxial structures delta-doped by Si, grown by a MBE method on a vicinal View the MathML source substrate misoriented by 0.5°,1.5° and 3° from the View the MathML source GaAs plane towards the View the MathML source direction were formed. In this way it is possible to obtain 1D channels, or at least, 1D periodic modulation of the 2D structure. All samples showed p-type conductivity. It was found that the resistivity of structures Rpa along the steps of vicinal surface is lower than that of Rpe across the steps and depends on temperature.
Keywords
Anisotropy of conductivity , Quantum wires , View the MathML source GaAs surface
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044949
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