Title of article :
Exciton stark shift in graded GaAs/AlxGa1−xAs quantum wells
Author/Authors :
E.C. Ferreira، نويسنده , , J.A.P. da Costa، نويسنده , , J.A.K. Freire، نويسنده , , V.N. Freire، نويسنده , , G.A. Farias، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
The effects of an external electric field in confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied considering realistic interface profiles. It is shown that the graded interfaces can blue shift the exciton energy by more than View the MathML source in the case of a smooth or parabolic (exponential)-like profile for electric fields up to View the MathML source.
Keywords :
Stark effect , Exciton , GaAs/AlxGa1?xAs , Graded interfaces
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
