Title of article
Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement
Author/Authors
R.J. Potter، نويسنده , , D. Alexandropoulos، نويسنده , , A. Erol، نويسنده , , S. Mazzucato، نويسنده , , H. Bülent Ertan and N. Balkan S¸ims¸ir، نويسنده , , M.J. Adams، نويسنده , , X. Marie، نويسنده , , H. Carrère، نويسنده , , E. Bedel، نويسنده , , G. Lacoste، نويسنده , , A. Arnoult، نويسنده , , C. Fontaine، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
240
To page
241
Abstract
We have developed a model for the rapid calculation of interband transitions in dilute nitride quantum well structures. The model assumes parabolic bands with the conduction band modified using the band anticrossing approach. The model is compared to results from View the MathML source models, which while being more accurate and flexible than our model, require extensive computational time. The model predictions are compared to photoluminescence and photomodulated reflectance measurements of interband transitions in a number of GaNAs quantum well samples.
Keywords
GaInNAs , Modelling , Dilute nitride
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044996
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