مرکز منطقه ای اطلاع رساني علوم و فناوري - Band structure and optical gain in GaInAsN quantum wells

Title of article :

Band structure and optical gain in GaInAsN quantum wells

Author/Authors :

H. Carrère، نويسنده , , A. Arnoult، نويسنده , , X. Marie، نويسنده , , T. Amand، نويسنده , , E. Bedel-Pereira، نويسنده , , R.J. Potter، نويسنده , , H. Bülent Ertan and N. Balkan S¸ims¸ir، نويسنده ,

Issue Information :

دوهفته نامه با شماره پیاپی سال 2003

Pages :

From page :

245

To page :

246

Abstract :

We have calculated the band structure and gain spectra of GaInAsN strained quantum wells based on the band anticrossing model using a 8 band View the MathML source Hamiltonian. Calculations are in good agreement with experimental values.

Keywords :

Gain , Band anticrossing , GaInAsN , Band structure

Journal title :

Physica E Low-dimensional Systems and Nanostructures

Serial Year :

2003

Journal title :

Physica E Low-dimensional Systems and Nanostructures

Record number :

1045001

Link To Document :

https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1045001