Lattice dynamic properties of interfaced InAs/GaAs superlattices

The effect of interfaces in several InGaAs/GaAs SLs with In content x=0.3 and 1, were studied. Interface thickness of 0,1,2 and 3 MLs were considered. The Raman spectra for x=0.3 evolves from a two peaks feature to a single peak with increasing the interface thickness. The View the MathML source Raman spectra change considerably by interfacing. Two weak features in the abrupt SL are observed to enhanced as the interface thickness is increased from one to three monolayers. The atomic displacements calculation reveals that most of the Raman modes of the InGaAs/GaAs or the InAs/GaAs SLs are extended or quasi-extended modes the case of interfaces with thickness of View the MathML source.