Optical phonons dispersion relation in Si/3C-SiC heterostructures

The dispersion relation for optical phonons in Si/3C-SiC heterostructures is calculated taking into account the existence of interfacial transition regions with thickness View the MathML source. A macroscopic theory based on the dielectric continuum model is used, which fulfills electrostatic boundary conditions. It is shown that interface effects can strongly decrease (up to View the MathML source) the frequency splitting of both the interface and confined modes in the low wave vector limit.